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| DSS5320T 20V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features * * * * * Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) C SOT-23 B C E B E Top View Device Symbol Pin-Out Top Ordering Information (Note 3) Product DSS5320T-7 Notes: Marking ZP4 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information ZP4 ZP4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2009 W Jan 1 Feb 2 2010 X Mar 3 2011 Y Apr 4 May 5 YM 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 2015 C Oct O Nov N 2016 D Dec D DSS5320T Document number: DS31620 Rev. 2 - 2 1 of 5 www.diodes.com October 2010 (c) Diodes Incorporated DSS5320T Maximum Ratings @TA = 25C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Repetitive Peak Pulse Current (Note 4) Continuous Collector Current Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IB Value -20 -20 -5 -5 -3 -2 -0.5 Unit V V V A A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Operating and Storage Temperature Range Notes: Symbol PD RJA TJ, TSTG Value 600 209 -55 to +150 Unit mW C/W C 4. Operated under pulsed conditions: pulse width 100ms, duty cycle 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 0.8 100 IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 10 0.6 1 0.4 0.1 0.2 RJA = 209C/W 0.01 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area DSS5320T Document number: DS31620 Rev. 2 - 2 2 of 5 www.diodes.com October 2010 (c) Diodes Incorporated DSS5320T Electrical Characteristics @TA = 25C unless otherwise specified Characteristic Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO Min -20 -20 -5 220 220 200 150 100 100 Typ 180 25 67 23 44 224 184 40 Max -100 -50 -100 -70 -130 -230 -210 -300 105 -1.1 -1.2 -1.2 50 Unit nA A nA V V V Test Conditions VCB = -20V, IE = 0 VCB = -20V, IE = 0, TA = 150C VEB = -5V, IC = 0 IC = -100A IC = -10mA IE = -100A VCE = -2V, IC = -0.1A VCE = -2V, IC = -0.5A VCE = -2V, IC = -1A VCE = -2V, IC = -2A VCE = -2V, IC = -3A IC = -0.5A, IB = -50mA IC = -1A, IB = -50mA IC = -2A, IB = -100mA IC = -2A, IB = -200mA IC = -3A, IB = -300mA IE = -2A, IB = -200mA IC = -2A, IB = -100mA IC = -3A, IB = -300mA VCE = -2V, IC = -1A VCE = -5V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz DC Current Gain (Note 5) hFE Collector-Emitter Saturation Voltage (Note 6) VCE(sat) mV Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Transition Frequency Output Capacitance Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: RCE(sat) VBE(sat) VBE(on) fT Cob ton td tr toff ts tf m V V V MHz pF ns ns ns ns ns ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.0 1.8 IC, COLLECTOR CURRENT (A) 1.6 1.4 IB = 4mA IB = 5mA 1,000 900 800 hFE, DC CURRENT GAIN 700 TA = 85C T A = 150C TA = 125C VCE = -2V 1.2 1.0 0.8 IB = 2mA IB = 3mA 600 500 TA = 25C 400 300 200 100 TA = -55C 0.6 0.4 0.2 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage 0 IB = 1mA 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical DC Current Gain vs. Collector Current DSS5320T Document number: DS31620 Rev. 2 - 2 3 of 5 www.diodes.com October 2010 (c) Diodes Incorporated DSS5320T 1 IC/IB = 10 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 TA = 150C T A = 125C T A = 85C 0.1 TA = 150C TA = 125C TA = 85C 0.01 TA = -55C 0.01 TA = -55C TA = 25C TA = 25C 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 1.0 VCE = -2V 1.2 IC/IB = 10 1.0 0.8 T A = -55C 0.8 TA = -55C 0.6 TA = 25C 0.6 TA = 25C TA = 85C 0.4 TA = 85C TA = 125C 0.4 T A = 150C T A = 125C 0.2 T A = 150C 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm DSS5320T Document number: DS31620 Rev. 2 - 2 4 of 5 www.diodes.com October 2010 (c) Diodes Incorporated DSS5320T Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com DSS5320T Document number: DS31620 Rev. 2 - 2 5 of 5 www.diodes.com October 2010 (c) Diodes Incorporated |
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